Thin film transistor array panel and manufacturing method thereof

ABSTRACT

A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a semiconductor layer on the gate insulating layer; forming an ohmic contact on the semiconductor layer; forming a data line and a drain electrode on the ohmic contact; depositing a passivation layer on the data line and the drain electrode; forming a first photoresist layer on the passivation layer; etching the passivation layer and the gate insulating layer using the first photoresist layer as a mask to expose a portion of the drain electrode and a portion of the substrate; depositing a conductive film; and removing the photoresist layer; to form a pixel electrode on a portion of the drain electrode exposed by the etching of the passivation layer.

BACKGROUND

(a) Field of the Invention

The present invention relates to a thin film transistor array panel anda manufacturing method thereof.

(b) Description of Related Art

An active type display device, such as a liquid crystal display (LCD) oran organic light emitting diode (OLED) display, includes a plurality ofpixels arranged in a matrix, each pixel including field generatingelectrodes and switching elements. The switching elements include thinfilm transistors (TFTs) having three terminals, a gate, a source, and adrain. The TFT of each pixel selectively transmits data signals to thefield-generating electrode in response to gate signals.

The display device further includes a plurality of signal lines fortransmitting signals to the switching elements, which include gate linestransmitting gate signals and data lines transmitting data signals.

The LCD and the OLED include a panel provided with the TFTs, thefield-generating electrodes, and the signal lines, which is referred toas a TFT array panel.

The TFT array panel has a layered structure that includes severalconductive layers and insulating layers. The gate lines, the data lines,and the field-generating electrodes are formed using various conductivelayers separated by insulating layers.

The TFT array panel having the layered structure is manufactured usingseveral lithography steps followed by etching steps. Since lithographyrequires cost and time, it is desirable to reduce the number of thelithography steps used in manufacturing the TFT array panel.

SUMMARY

A method of manufacturing a thin film transistor array panel isprovided, which includes: forming a gate line on a substrate; forming agate insulating layer on the gate line; forming a semiconductor layer onthe gate insulating layer; forming an ohmic contact on the semiconductorlayer; forming a data line and a drain electrode on the ohmic contact;depositing a passivation layer on the data line and the drain electrode;forming a first photoresist layer on the passivation layer; etching thepassivation layer and the gate insulating layer using the firstphotoresist layer as a mask to expose a portion of the drain electrodeand a portion of the substrate; depositing a conductive film; removingthe photoresist layer; to form a pixel electrode on the portion of thedrain electrode exposed by the etching of the passivation layer.

The conductive film may include a first portion disposed on the firstphotoresist layer and a remaining second portion, and the removal of thephotoresist layer may remove the first portion of the conductive film bylift off.

The pixel electrode may directly contact the substrate at least in partand the exposed portion of the substrate may enclose the exposed portionof the drain electrode. The exposed portion of the drain electrode andthe exposed portion of the substrate may occupy an area defined by thegate line and the data line.

The etching of the passivation layer may expose a portion of the dataline, and the method may further include: forming a contact assistant onthe exposed portion of the data line.

The formation of the contact assistant may be performed simultaneouslywith the formation of the pixel electrode.

The formation of the gate insulating layer, the formation of thesemiconductor layer, the formation of the ohmic contact, and theformation of the data lines and the drain electrodes may include:sequentially depositing a gate insulating layer, an intrinsic amorphoussilicon layer, an extrinsic amorphous silicon layer, and a dataconductor layer; forming a second photoresist layer on the dataconductor layer; sequentially etching the data conductor layer, theextrinsic amorphous silicon layer, and the intrinsic silicon layer usingthe second photoresist layer as a mask to form a data conductor, anextrinsic semiconductor layer, and an intrinsic semiconductor layer;transforming the second photoresist layer into a third photoresistlayer; and etching the data conductor and the extrinsic semiconductorlayer to form the data line and the drain electrode and ohmic contacts.

The second photoresist layer may be formed by using a photo maskincluding a light blocking area, a translucent area, and a lighttransmitting area.

The partial removal of the second photoresist layer to form the thirdphotoresist layer may include ashing.

The formation of the gate insulating layer, the formation of thesemiconductor layer, the formation of the ohmic contact, the formationof the data lines, and the formation of the drain electrodes may beperformed using a single lithography step.

The data line and the drain electrode may include Mo or Cr and the pixelelectrode may include amorphous ITO or IZO.

A method of manufacturing a thin film transistor array panel isprovided, which includes: forming a gate line on a substrate; forming agate insulating layer on the gate line; forming a semiconductor layer onthe gate insulating layer; forming an ohmic contact on the semiconductorlayer; forming a data line and a drain electrode on the ohmic contact;depositing a passivation layer on the data line and the drain electrode;forming a first photoresist layer; etching the passivation layer and thegate insulating layer using the first photoresist layer as a mask toexpose a portion of the substrate; partially removing the firstphotoresist layer to form a second photoresist layer; etching thepassivation layer using the second photoresist layer as a mask to exposea portion of the drain electrode; depositing a conductive film; andremoving the second photoresist layer to form a pixel electrode on theportion of the drain electrode exposed by the etching of the passivationlayer.

The first photoresist layer may be formed by using a photo maskincluding a light blocking area, a translucent area, and a lighttransmitting area.

The partial removal of the first photoresist layer to form the secondphotoresist layer may comprise ashing.

The semiconductor layer, the ohmic contact, the data line, and the drainelectrode may be formed using a single lithography step.

The conductive film may include a first portion disposed on the secondphotoresist layer and a remaining second portion, and the removal of thesecond photoresist layer may remove the first portion of the conductivefilm by lift off.

The pixel electrode may directly contact the substrate and the gateinsulating layer at least in part.

The etching of the passivation layer using the second photoresist layeras a mask may expose a portion of the gate insulating layer, and an areadefined by the gate line and the data line may be substantially occupiedby the exposed portion of the substrate except for the exposed portionof the drain electrode and the exposed portion of the gate insulatinglayer.

The etching of the passivation layer using the second photoresist layermay expose a portion of the data line, and the removal of the secondphotoresist layer may include: forming a contact assistant on theexposed portion of the data line.

The formation of the gate insulating layer, the formation of thesemiconductor layer, the formation of the ohmic contact, and theformation of the data lines and the drain electrodes may include:sequentially depositing a gate insulating layer, an intrinsic amorphoussilicon layer, an extrinsic amorphous silicon layer, and a dataconductor layer; forming a third photoresist layer on the data conductorlayer; sequentially etching the data conductor layer, the extrinsicamorphous silicon layer, and the intrinsic silicon layer using the thirdphotoresist layer as a mask to form a data conductor, an extrinsicsemiconductor layer, and an intrinsic semiconductor layer; transformingthe third photoresist layer into a fourth photoresist layer; and etchingthe data conductor and the extrinsic semiconductor layer to form thedata line, the drain electrode, and ohmic contacts.

The third photoresist layer may be formed by using a photo maskincluding a light blocking area, a translucent area, and a lighttransmitting area.

The partial removal of the third photoresist layer to form the fourthphotoresist layer may comprise ashing.

A thin film transistor array panel is provided, which includes: a gateline formed on a substrate; a gate insulating layer formed on the gateline; a semiconductor layer formed on the gate insulating layer; a dataline and a drain electrode formed on the semiconductor layer at least inpart, the drain electrode including first and second portions; apassivation layer formed on the data line and the first portion of thedrain electrode; and a pixel electrode formed on the substrate and thesecond portion of the drain electrode, said pixel electrode having edgessubstantially coinciding with edges of the passivation layer.

The passivation layer may have a contact hole exposing a portion of thedata line, and the thin film transistor array panel may further includea contact assistant formed in the contact hole and having edgessubstantially coinciding with edges of the contact hole.

The gate insulating layer may have edges substantially coinciding withedges of the passivation layer except for a portion under the drainelectrode.

The gate insulating layer may have edges substantially coinciding withedges of the passivation layer except for a portion around the drainelectrode and the portion around the drain electrode may be exposed.

The exposed portion of the gate insulating layer may be covered with thepixel electrode.

The semiconductor layer may have substantially the same planar shape asthe data line and the drain electrode except for a portion disposedbetween the data line and the drain electrode.

The pixel electrode may include a cutout.

The thin film transistor array panel may further include a storageelectrode comprised of the same layer as the gate line and overlappingthe pixel electrode and a storage conductor formed on the gateinsulating layer, connected to the pixel electrode, and overlapping thestorage electrode.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will become more apparent by describingembodiments thereof in detail with reference to the accompanying drawingin which:

FIG. 1 is a layout view of a TFT array panel according to an embodimentof the present invention;

FIG. 2A is a sectional view of the TFT array panel shown in FIG. 1 takenalong the line IIA-IIA′;

FIG. 2B is a sectional view of the TFT array panel shown in FIG. 1 takenalong the line IIB-IIB′;

FIGS. 3, 6 and 9 are layout views of a TFT array panel shown in FIGS.1-2B in intermediate steps of a manufacturing method thereof accordingto an embodiment of the present invention;

FIG. 4A is a sectional view of the TFT array panel shown in FIG. 3 takenalong the line IVA-IVA′;

FIG. 4B is a sectional view of the TFT array panel shown in FIG. 3 takenalong the lines IVB-IVB′;

FIGS. 5A and 5B illustrate the step following the step shown in FIGS. 4Aand 4B, where FIG. 5A is a sectional view of the TFT array panel shownin FIG. 3 taken along the line IVA-IVA′ and FIG. 5B is a sectional viewof the TFT array panel shown in FIG. 3 taken along the lines IVB-IVB′;

FIG. 7A is a sectional view of the TFT array panel shown in FIG. 6 takenalong the line VIIA-VIIA′;

FIG. 7B is a sectional view of the TFT array panel shown in FIG. 6 takenalong the lines VIIB-VIIB′;

FIGS. 8A and 8B illustrate the step following the step shown in FIGS. 7Aand 7B, where FIG. 8A is a sectional view of the TFT array panel shownin FIG. 6 taken along the line VIIA-VIIA′ and FIG. 8B is a sectionalview of the TFT array panel shown in FIG. 6 taken along the linesVIIB-VIIB′;

FIG. 10A is a sectional view of the TFT array panel shown in FIG. 9taken along the line XA-XA′;

FIG. 10B is a sectional view of the TFT array panel shown in FIG. 9taken along the lines XB-XB′;

FIGS. 11A and 11B illustrate the step following the step shown in FIGS.10A and 10B, where FIG. 11A is a sectional view of the TFT array panelshown in FIG. 9 taken along the line XA-XA′ and FIG. 11B is a sectionalview of the TFT array panel shown in FIG. 9 taken along the linesXB-XB′;

FIG. 12 is a layout view of a TFT array panel according to anotherembodiment of the present invention;

FIG. 13A is a sectional view of the TFT array panel shown in FIG. 12taken along the line XIIIA-XIIIA′;

FIG. 13B is a sectional view of the TFT array panel shown in FIG. 12taken along the line XIIIB-XIIIB′;

FIGS. 14A and 14B are sectional views of the TFT array panel shown inFIGS. 12-13B taken along the lines XIIIA-XIIIA′ and XIIIB-XIIIB′,respectively, in intermediate steps of a manufacturing method thereofaccording to an embodiment of the present invention;

FIGS. 15A and 15B are sectional views of the TFT array panel shown inFIGS. 12-13B taken along the lines XIIIA-XIIIA′ and XIIIB-XIIIB′, whichillustrate the step following the step shown in FIGS. 14A and 14B;

FIGS. 16A and 16B are sectional views of the TFT array panel shown inFIGS. 12-13B taken along the lines XIIIA-XIIIA′ and XIIIB-XIIIB′, whichillustrate the step following the step shown in FIGS. 15A and 15B;

FIGS. 17A and 17B are sectional views of the TFT array panel shown inFIGS. 12-13B taken along the lines XIIIA-XIIIA′ and XIIIB-XIIIB′, whichillustrate the step following the step shown in FIGS. 16A and 16B;

FIGS. 18A and 18B are sectional views of the TFT array panel shown inFIGS. 12-13B taken along the lines XIIIA-XIIIA′ and XIIIB-XIIIB′, whichillustrate the step following the step shown in FIGS. 17A and 17B;

FIG. 19 is a layout view of a TFT array panel according to anotherembodiment of the present invention; and

FIG. 20 is a sectional view of the TFT array panel shown in FIG. 19taken along the line XX-XX′.

DETAILED DESCRIPTION

The present invention now will be described more fully hereinafter withreference to the accompanying drawings, in which preferred embodimentsof the invention are shown. This invention may, however, be embodied inmany different forms and should not be construed as limited to theembodiments set forth herein.

In the drawings, the thickness of layers and regions are exaggerated forclarity. Like numerals refer to like elements throughout. It will beunderstood that when an element such as a layer, region or substrate isreferred to as being “on” another element, the element can be directlyon the other element or intervening elements may also be present. Incontrast, when an element is referred to as being “directly on” anotherelement, there are no intervening elements present.

A TFT array panel according to an embodiment of the present inventionwill be described in detail with reference to FIGS. 1, 2A and 2B.

FIG. 1 is a layout view of a TFT array panel according to an embodimentof the present invention, FIG. 2A is a sectional view of the TFT arraypanel shown in FIG. 1 taken along the line IIA-IIA′, and FIG. 2B is asectional view of the TFT array panel shown in FIG. 1 taken along thelines IIB-IIB′.

A plurality of gate lines 121 are formed on an insulating substrate 110such as transparent glass or plastic. The gate lines 121 transmit gatesignals and extend substantially in a transverse direction. Each gateline 121 includes a plurality of gate electrodes 124 projecting upwardand downward, as shown in FIG. 1. Each gate line 121 may further includean end portion (not shown) having a large area for contact with anotherlayer or an external driving circuit. A gate driving circuit (not shown)for generating the gate signals may be mounted on a flexible printedcircuit (FPC) film, which may be attached to the substrate 110, directlymounted on the substrate 110, or integrated onto the substrate 110. Thegate lines 121 may extend to be connected to a driving circuit that maybe integrated on the substrate 110.

The gate lines 121 may comprise, e.g., a metal comprising Al, such as Aland Al alloy, a metal comprising Ag, such as Ag and Ag alloy, a metalcomprising Cu, such as Cu and Cu alloy, a metal comprising Mo, such asMo and Mo alloy, Cr, Ti or Ta. The gate lines 121 may have amulti-layered structure including two conductive films (not shown)having different physical characteristics. One of the two filmspreferably comprises a low resistivity metal including a metalcomprising Al, a metal comprising Ag, or a metal comprising Cu forreducing signal delay or voltage drop. The other film preferablycomprises a material such as a metal comprising Mo, Cr, Ta, or Ti, whichhave good physical, chemical, and electrical contact characteristicswith other materials, such as indium tin oxide (ITO) or indium zincoxide (IZO). Good examples of the combination of the two films are alower Cr film and an upper Al (alloy) film and a lower Al (alloy) filmand an upper Mo (alloy) film. However, the gate lines 121 may comprisevarious metals or conductors.

The lateral sides of the gate lines 121 are inclined relative to asurface of the substrate 110, and the inclination angle of the sides mayrange from about 30 to about 80 degrees.

A gate insulating layer 140 comprising silicon nitride (SiNx) is formedon the gate lines 121.

A plurality of semiconductor stripes 151 comprising hydrogenatedamorphous silicon (abbreviated to “a-Si”) or polysilicon are formed onthe gate insulating layer 140. Each semiconductor stripe 151 extendssubstantially in the longitudinal direction and has a plurality ofprojections 154 branching out toward the gate electrodes 124.

A plurality of ohmic contact stripes and islands 161 and 165 are formedon the semiconductor stripes 151. The ohmic contact stripes and islands161 and 165 may comprise n+ hydrogenated a-Si heavily doped with an ntype impurity, such as phosphorous, or the ohmic contact stripes andislands 161 and 165 may comprise silicide. Each ohmic contact stripe 161has a plurality of projections 163, and the projections 163 and theohmic contact islands 165 are located in pairs on the projections 154 ofthe semiconductor stripes 151.

The lateral sides of the semiconductor stripes 151 and the ohmiccontacts 161 and 165 are inclined relative to a surface of the substrate110, and the inclination angles of the lateral sides may range fromabout 30 to about 80 degrees.

A plurality of data lines 171 and a plurality of drain electrodes 175separated from the data lines 171 are formed on the ohmic contacts 161and 165.

The data lines 171 transmit data signals and extend substantially in thelongitudinal direction to intersect the gate lines 121. Each data line171 includes a plurality of source electrodes 173 projecting toward thegate electrodes 124 and an end portion 179 having a large area forcontact with another layer or an external driving circuit. A datadriving circuit (not shown) for generating the data signals may bemounted on a flexible printed circuit (FPC) film, which may be attachedto the substrate 110, directly mounted on the substrate 110, orintegrated onto the substrate 110. The data lines 171 may extend to beconnected to a driving circuit that may be integrated on the substrate110.

The drain electrodes 175 are separated from the data lines 171 anddisposed opposite the source electrodes 173 with respect to the gateelectrodes 124. Each drain electrode 175 includes a wide end portion 177and a narrow end portion. The source electrode 173 includes a recessedportion that partially encloses the narrow end portion of the drainelectrode 175.

A gate electrode 124, a source electrode 173, and a drain electrode 175along with a projection 154 of a semiconductor stripe 151 form a TFThaving a channel formed in the projection 154 disposed between thesource electrode 173 and the drain electrode 175.

The data lines 171 and the drain electrodes 175 may comprise arefractory metal, such as Cr, Mo, Ti, Ta, or alloys thereof. The datalines 171 and the drain electrodes 175 may also have a multilayeredstructure comprising a refractory metal film (not shown) and a lowresistivity film (not shown). Good examples of a multi-layered structureare a double-layered structure including a lower Cr/Mo (alloy) film andan upper Al (alloy) film and a triple-layered structure of a lower Mo(alloy) film, an intermediate Al (alloy) film, and an upper Mo (alloy)film. However, the data lines 171 and the drain electrodes 175 maycomprise various metals or conductors.

The data lines 171 and the drain electrodes 175 have inclined edgeprofiles relative to a surface of the substrate 110, and the inclinationangles of the edge profiles may range from about 30 to about 80 degrees.

The ohmic contacts 161 and 165 are interposed only between theunderlying semiconductor stripes 151 and the overlying conductors 171and 175 thereon and reduce the contact resistance therebetween. Thesemiconductor stripes 151 have almost the same planar shapes as the datalines 171 and the drain electrodes 175 as well as the underlying ohmiccontacts 161 and 165. However, the projections 154 of the semiconductorstripes 151 include some exposed portions, which are not covered withthe data lines 171 and the drain electrodes 175. These exposed portionsof the projections 154 include portions located between the sourceelectrodes 173 and the drain electrodes 175.

A passivation layer 180 is formed on the data lines 171, the drainelectrodes 175, and the exposed portions of the semiconductor stripes151. The passivation layer 180 may comprise an inorganic insulator suchas silicon nitride or silicon oxide. Alternatively, the passivationlayer 180 may comprise an organic insulator or low dielectric insulator.The organic insulator and the low dielectric insulator preferably have adielectric constant less than about 4.0. The low dielectric insulatormay comprise a-Si:C:O and a-Si:O:F formed by plasma enhanced chemicalvapor deposition (PECVD). The organic insulator for the passivation 180may have photosensitivity and the passivation layer 180 may have a flatsurface. The passivation layer 180 may comprise a lower film of aninorganic insulator and an upper film of an organic insulator to obtainthe desirable insulating characteristics of the organic insulator whilepreventing the exposed portions of the semiconductor stripes 151 frombeing damaged by the organic insulator.

The passivation layer 180 has a plurality of contact holes 182 exposingthe end portions 179 of the data lines 171 and a plurality of openings187 in areas enclosed by the gate lines 121 and the data lines 171. Theopenings 187 expose the wide end portions 177 of the drain electrodes175. Portions of the gate insulating layer 140 in the openings 187,which are not covered by the drain electrodes 175, are also removed toexpose the substrate 110. Accordingly, the gate insulating layer 140 mayhave substantially the same planar shape as the passivation layer 180except for portions disposed under the data lines 171 and the drainelectrodes 175.

A plurality of pixel electrodes 190 are formed in the openings 187 onthe passivation layer 180, and a plurality of contact assistants 82 areformed in the contact holes 182. The pixel electrodes 190 and contactassistants 82 may comprise a transparent conductor such as (amorphous)ITO or IZO or a reflective conductor such as Ag, Al, or alloys thereof.The boundaries of the pixel electrodes 190 and the contact assistants 82coincide with those of the passivation layer 180.

The pixel electrodes 190 are physically and electrically connected tothe drain electrodes 175 such that the pixel electrodes 190 receive datavoltages from the drain electrodes 175. The pixel electrodes 190supplied with the data voltages generate electric fields in cooperationwith a common electrode (not shown) of an opposing display panel (notshown) supplied with a common voltage, which determine the orientationsof liquid crystal molecules (not shown) of a liquid crystal layer (notshown) disposed between the pixel electrode and the common electrode onthe opposing display panel. A pixel electrode 190 and the commonelectrode form a capacitor referred to as a “liquid crystal capacitor,”which stores applied voltages after the TFT turns off.

The contact assistants 82 are connected to the end portions 179 of thedata lines 171 through the contact holes 182. The contact assistants 82protect the end portions 179 and enhance the adhesion between the endportions 179 and external devices.

When the gate lines 121 are connected to another layer or externaldevices as described above, a plurality of contact holes (not shown) anda plurality of contact assistants (not shown) in the contact holes maybe provided.

Now, a method of manufacturing the TFT array panel shown in FIGS. 1-2Baccording to an embodiment of the present invention will be described indetail with reference to FIGS. 3-11B as well as FIGS. 1-2B.

FIGS. 3, 6 and 9 are layout views of a TFT array panel shown in FIGS.1-2B in intermediate steps of a manufacturing method thereof accordingto an embodiment of the present invention. FIG. 4A is a sectional viewof the TFT array panel shown in FIG. 3 taken along the line IVA-IVA′ andFIG. 4B is a sectional view of the TFT array panel shown in FIG. 3 takenalong the lines IVB-IVB′. FIGS. 5A and 5B illustrate the step followingthe step shown in FIGS. 4A and 4B, where FIG. 5A is a sectional view ofthe TFT array panel shown in FIG. 3 taken along the line IVA-IVA′ andFIG. 5B is a sectional view of the TFT array panel shown in FIG. 3 takenalong the lines IVB-IVB′. FIG. 7A is a sectional view of the TFT arraypanel shown in FIG. 6 taken along the line VIIA-VIIA′ and FIG. 7B is asectional view of the TFT array panel shown in FIG. 6 taken along thelines VIIB-VIIB′. FIGS. 8A and 8B illustrate the step following the stepshown in FIGS. 7A and 7B, where FIG. 8A is a sectional view of the TFTarray panel shown in FIG. 6 taken along the line VIIA-VIIA′ and FIG. 8Bis a sectional view of the TFT array panel shown in FIG. 6 taken alongthe lines VIIB-VIIB′. FIG. 10A is a sectional view of the TFT arraypanel shown in FIG. 9 taken along the line XA-XA′ and FIG. 10B is asectional view of the TFT array panel shown in FIG. 9 taken along thelines XB-XB′. FIGS. 11A and 11B illustrate the step following the stepshown in FIGS. 10A and 10B, where FIG. 11A is a sectional view of theTFT array panel shown in FIG. 9 taken along the line XA-XA′ and FIG. 11Bis a sectional view of the TFT array panel shown in FIG. 9 taken alongthe lines XB-XB′.

Referring to FIGS. 3, 4A and 4B, a conductive layer preferablycomprising metal is deposited on an insulating substrate 110 preferablycomprising transparent glass by, e.g., sputtering. The conductive layermay have a thickness of about 1,000-3,000 Å. The conductive layer isthen subjected to lithography and etching to form a plurality of gatelines 121 including gate electrodes 124.

Referring to FIGS. 5A and 5B, a gate insulating layer 140, an intrinsica-Si layer 150, and an extrinsic a-Si layer 160 are sequentiallydeposited using, e.g., CVD, etc. The gate insulating layer 140 maycomprise silicon nitride having a thickness of about 2,000-5,000 Å. Thedeposition temperature of the gate insulating layer 140 is preferably ina range of about 250-450° C.

A conductive layer 170 comprising metal is then deposited using, e.g.,sputtering, and a photoresist layer 40 with a thickness of about 1-2microns is coated on the conductive layer 170.

The photoresist layer 40 is exposed to light through a photo mask (notshown), and developed such that the developed photoresist has a positiondependent thickness. The photoresist shown in FIGS. 5A and 5B includes aplurality of first to third portions in order of decreasing thickness.The first portions 42 are located on wire areas A and the secondportions 44 are located on channel areas B. Third portions (notnumbered) are located on remaining areas C and have substantially zerothickness, thereby exposing underlying portions of the conductive layer170. The thickness ratio of the second portions 44 to the first portions42 is adjusted depending upon the process conditions in the subsequentprocess steps. It may be preferable that the thickness of the secondportions 44 is equal to or less than half of the thickness of the firstportions 42, and in particular, equal to or less than 4,000 Å.

The position-dependent thickness of the photoresist may be obtainedusing one of several techniques, for example, by providing translucentareas on the exposure mask as well as light transmitting areas and lightblocking opaque areas. The translucent areas may have a slit pattern, alattice pattern, a thin film(s) with intermediate transmittance, orintermediate thickness. When using a slit pattern, it may be preferablethat the width of the slits or the distance between the slits is smallerthan the resolution of a light exposer used for the photolithography.Another example is to use reflowable photoresist. In detail, once aphotoresist pattern comprising a reflowable material is formed by usinga normal exposure mask having only transparent areas and opaque areas,the photoresist layer 40 is subjected to a reflow process to flow ontoareas without the photoresist, thereby forming thin portions.

The different thickness of the first portions 42 and second portions 44of the photoresist layer 40 enables the selective etching of underlyinglayers when using suitable process conditions. Therefore, a plurality ofdata lines 171 including source electrodes 173 and end portions 179, aplurality of drain electrodes 175 including wide end portions 177, aplurality of ohmic contact stripes 161 including projections 163, aplurality of ohmic contact islands 165, and a plurality of semiconductorstripes 151 including projections 154 may be obtained as shown in FIGS.6, 7A and 7B by a series of etching steps.

For descriptive purpose, portions of the conductive layer 170, theextrinsic a-Si layer 160, and the intrinsic a-Si layer 150 on the wireareas A are referred to as first portions, portions of the conductivelayer 170, the extrinsic a-Si layer 160, and the intrinsic a-Si layer150 on the channel areas B are referred to as second portions, andportions of the conductive layer 170, the extrinsic a-Si layer 160, andthe intrinsic a-Si layer 150 on the remaining areas C are referred to asthird portions.

An exemplary sequence of forming such a structure is as follows:

-   -   (1) Removal of third portions of the conductive layer 170, the        extrinsic a-Si layer 160 and the intrinsic a-Si layer 150 on the        remaining areas C;    -   (2) Removal of the second portions 44 of the photoresist;    -   (3) Removal of the second portions of the conductive layer 170        and the extrinsic a-Si layer 160 on the channel areas B; and    -   (4) Removal of the first portions 42 of the photoresist.

Another exemplary sequence is as follows:

-   -   (1) Removal of the third portions of the conductive layer 170;    -   (2) Removal of the second portions 44 of the photoresist;    -   (3) Removal of the third portions of the extrinsic a-Si layer        160 and the intrinsic a-Si layer 150;    -   (4) Removal of the second portions of the conductive layer 170;    -   (5) Removal of the first portions 42 of the photoresist; and    -   (6) Removal of the second portions of the extrinsic a-Si layer        160.

Because the first portions 42 of the photoresist layer 40 are thickerthan the second portions 44, even when the second portions 44 of thephotoresist are removed, portions of the first portions 42 will remain.The remaining first portions 42 will have a reduced thickness, but willstill prevent underlying layers from being removed or etched.

The removal of the second portions 44 of the photoresist may beperformed either simultaneously with or in a separate step from theremoval of the third portions of the extrinsic a-Si layer 160 and of theintrinsic a-Si layer 150. Similarly, the removal of the first portions42 of the photoresist may be performed either simultaneously with or ina separate step from the removal of the second portions of the extrinsica-Si layer 160. For example, a gas mixture of SF₆ and HCl or SF₆ and O₂may etch the photoresist and the a-Si layers 150 and 160 withsubstantially equal etch ratios.

Residue of the photoresist remaining on the surface of the conductivelayer 170 may be removed by, e.g., ashing.

In the step (3) of the first example or in the step (4) of the secondexample, examples of etching gases for etching the intrinsic a-Si layer150 include a gas mixture of CF₄ and HCl and a gas mixture of CF₄ andO₂. The gas mixture of CF₄ and O₂ can provide uniform etching thicknessof the intrinsic a-Si layer 150.

Referring to FIGS. 8A and 8B, a passivation layer 180 is deposited and apositive photoresist layer 50 is coated. Thereafter, a photo mask 60 isaligned with the substrate 110 and the photoresist layer 50 is exposedto light through the photo mask 60.

The photo mask 60 includes a transparent substrate 61 and an opaquelight blocking film 62 and is divided into light transmitting areas TA1and light blocking areas BA1. The light blocking film 62 has openings onthe light transmitting areas TA1. The light blocking film 62 exists as awide area having width larger than a predetermined value on the lightblocking areas BA1. The light transmitting areas TA1 are positioned tocorrespond with the end portions 179 of the data lines 171 and areasenclosed by the gate lines 121 and the data lines 171. The lightblocking areas BA1 are positioned to correspond with the remainingportions. Referring to FIGS. 8A and 8B, hatched portions of thephotoresist 50 facing the light transmitting areas TA1 are exposed tolight, while portions of the photoresist 50 facing the light blockingareas BA1 are not exposed to light.

The photoresist 50 is developed such that portions 57 of the photoresist50 that are not exposed to light remain, as shown in FIGS. 9, 10A and10B. The passivation layer 180 is etched using the remaining portions 57of the photoresist as an etch mask to form a plurality of openings 187exposing portions of the wide end portions 177 of the drain electrodes175 and a plurality of contact holes 182 exposing the end portions 179of the data lines 171. Subsequently, exposed portions of the gateinsulating layer 140 are removed to expose the substrate 110.

Referring to FIGS. 11A and 11B, a conductive film 90 preferablycomprising IZO, ITO, or amorphous ITO is deposited by, e.g., sputtering.

The conductive film 90 includes first portions 91 disposed on thephotoresist 57 and remaining second portions 92. Since the heightdifference between the surface and the bottom of the photoresist 57 islarge due to the thickness of the photoresist 57, the first portions 91and the second portions 92 of the conductive film 90 are separated fromeach other at least in part to form gaps therebetween. These gaps exposeat least portions of the lateral sides of the photoresist 57.

The substrate 110 is then dipped into a developer such that thedeveloper infiltrates into the photoresist 57 through the exposedlateral sides of the photoresist 52 to remove the photoresist 57. Atthis time, the first portions 91 of the conductive film 90 disposed onthe photoresist 57 come off along with the photoresist 57, which isreferred to as “lift-off.” As a result, only the second portions 92 ofthe conductive film 90 remain to form a plurality of pixel electrodes190 and a plurality of contact assistants 82 as shown in FIGS. 1, 2A and2B.

Since the manufacturing method of the TFT array panel according to anembodiment simultaneously forms the data lines 171, the drain electrodes175, the semiconductors 151, and the ohmic contacts 161 and 165 using alithography step and omits a lithography step for forming the pixelelectrodes 190 and the contact assistants 82, the manufacturing processmay be simplified.

Now, a TFT array panel according to another embodiment of the presentinvention will be described in detail with reference to FIGS. 13, 14Aand 14B.

FIG. 12 is a layout view of a TFT array panel according to anotherembodiment of the present invention, FIG. 13A is a sectional view of theTFT array panel shown in FIG. 12 taken along the line XIIIA-XIIIA′, andFIG. 13B is a sectional view of the TFT array panel shown in FIG. 12taken along the line XIIIB-XIIIB′.

A layered structure of the TFT array panel according to this embodimentis similar to that shown in FIGS. 1, 2A and 2B. That is, a plurality ofgate lines 121 including gate electrodes 124 are formed on a substrate110. A gate insulating layer 140, a plurality of semiconductor stripes151 including projections 154, and a plurality of ohmic contact stripes161 including projections 163 and a plurality of ohmic contact islands165 are sequentially formed thereon. A plurality of data lines 171including source electrodes 173 and end portions 179, and a plurality ofdrain electrodes 175 including wide end portions 177 are formed on theohmic contacts 161 and 165. A passivation layer 180 is formed thereon. Aplurality of contact holes 182 and a plurality of openings 187 areformed in the passivation layer 180. A plurality of pixel electrodes 190and a plurality of contact assistants 82 are formed in the openings 187and the contact holes 182, respectively.

Unlike the TFT array panel shown in FIGS. 1, 2A, and 2B, portions of thegate insulating layer 140 around the drain electrodes 175 in theopenings 187 are exposed.

Now, a method of manufacturing the TFT array panel shown in FIGS. 12-13Baccording to an embodiment of the present invention will be described indetail with reference to FIGS. 14A-18B as well as FIGS. 12-13B.

FIGS. 14A and 14B are sectional views of the TFT array panel shown inFIGS. 12-13B taken along the lines XIIIA-XIIIA′ and XIIIB-XIIIB′,respectively, in intermediate steps of a manufacturing method thereofaccording to an embodiment of the present invention, FIGS. 15A and 15Bare sectional views of the TFT array panel shown in FIGS. 12-13B takenalong the lines XIIIA-XIIIA′ and XIIIB-XIIIB′, which illustrate the stepfollowing the step shown in FIGS. 14A and 14B, FIGS. 16A and 16B aresectional views of the TFT array panel shown in FIGS. 12-13B taken alongthe lines XIIIA-XIIIA′ and XIIIB-XIIIB′, which illustrate the stepfollowing the step shown in FIGS. 15A and 15B, FIGS. 17A and 17B aresectional views of the TFT array panel shown in FIGS. 12-13B taken alongthe lines XIIIA-XIIIA′ and XIIIB-XIIIB′, which illustrate the stepfollowing the step shown in FIGS. 16A and 16B, and FIGS. 18A and 18B aresectional views of the TFT array panel shown in FIGS. 12-13B taken alongthe lines XIIIA-XIIIA′ and XIIIB-XIIIB′, which illustrate the stepfollowing the step shown in FIGS. 17A and 17B.

Referring to FIGS. 14A and 14B, a plurality of gate lines 121 includinggate electrodes 124, a gate insulating layer 140, a plurality ofsemiconductor stripes 151 including projections 154, a plurality ofohmic contact stripes 161 including projections 163, a plurality ofohmic contact islands 165, a plurality of data lines 171 includingsource electrodes 173 and end portions 179, and a plurality of drainelectrodes 175 including wide end portions 177 are formed as describedwith reference to FIGS. 3-7B.

Subsequently, a passivation layer 180 is deposited and a positivephotoresist layer 70 is coated thereon. Thereafter, a photo mask 65 isaligned with the substrate 110.

The photo mask 65 includes a transparent substrate 66 and an opaquelight blocking film 67 and is divided into light transmitting areas TA2,light blocking areas BA2, and translucent areas SA. The light blockingfilm 67 has openings on the light transmitting areas TA2 and slits onthe translucent areas SA. The openings and the slits are defined by thewidth thereof relative to a predetermined value. Those having a widthlarger than the predetermined value are referred to as openings, whilethose having a width smaller than the predetermined value are referredto as slits. The translucent areas SA are positioned to correspond withthe end portions 179 of the data lines 171 and portions of the drainelectrodes 175 including the wide end portions 177 and the peripheralareas therearound. The light transmitting areas TA2 are positioned tocorrespond with the areas enclosed by the gate lines 121 and the datalines 171 except for the portions corresponding to the translucent areasSA. The light blocking areas BA2 correspond to the remaining portions.

The photoresist layer 70 is exposed to light through the photo mask 65and is developed such that first portions 72 and second portions 74thinner than the first portions 72 remain, as shown in FIGS. 15A and15B. In FIGS. 14A and 14B, the hatched portions of the photoresist layer70 indicate the portions to be removed after development. Referencenumeral 76 indicates the portions to be removed after development amongthe portions facing the translucent areas SA.

Referring to FIGS. 15A and 15B, the passivation layer 180 and the gateinsulating layer 140 are etched using the remaining portions 72 and 74of the photoresist layer 70 as an etch mask, thereby exposing thesubstrate 110.

Referring to FIGS. 16A and 16B, the thin portions 74 of the photoresistlayer 70 are removed by, e.g., ashing, and the thickness of the thickportions 52 is decreased to form a photoresist portion 77.

Referring to FIGS. 17A and 17B, the passivation layer 180 is etchedusing the photoresist portion 77 as an etch mask to form a plurality ofopenings exposing portions of the drain electrodes 175, portions of thegate insulating layer 140 disposed around the drain electrodes 175, anda plurality of contact holes 182 exposing the end portions 179 of thedata lines 179.

Referring to FIGS. 18A and 18B, a conductive film 90 preferablycomprising IZO, ITO, or amorphous ITO is deposited by sputtering, etc.The conductive film 90 includes first portions 91 disposed on thephotoresist 77 and remaining second portions 92. The photoresist 77 andthe first portions 91 of the conductive film 90 thereon are removed bylift off to form a plurality of pixel electrodes 190 and a plurality ofcontact assistants 82 as shown in FIGS. 12, 13A, and 13B.

The gate insulating layer 140 is exposed near the drain electrodes 175.Therefore, the upper surface of the gate insulating layer 140 providesan intermediate transition surface between the upper surface of thedrain electrodes 175 to the upper surface of the substrate 110. Thus,the disconnection of the pixel electrode layer 190 from the edge of thedrain electrodes 175 can be avoided.

Since the manufacturing method of the TFT array panel according to thisembodiment also simultaneously forms the data lines 171, the drainelectrodes 175, the semiconductors 151, and the ohmic contacts 161 and165 using a single lithography step and omits a separate lithographystep for forming the pixel electrodes 190 and the contact assistants 82,the manufacturing process may be simplified.

Many of the above-described features of the TFT array panel and themanufacturing method thereof shown in FIGS. 1-11B may also apply to theTFT array panel and the manufacturing method thereof shown in FIGS.12-18B.

Now, a TFT array panel according to another embodiment of the presentinvention will be described in detail with reference to FIGS. 19 and 20.

FIG. 19 is a layout view of a TFT array panel according to anotherembodiment of the present invention. FIG. 20 is a sectional view of theTFT array panel shown in FIG. 19 taken along the line XX-XX′.

A layered structure of the TFT array panel according to this embodimentis similar to that shown in FIGS. 1, 2A, and 2B. That is, a plurality ofgate lines 121 including gate electrodes 124 are formed on a substrate110. A gate insulating layer 140, a plurality of semiconductor stripes151 including projections 154, and a plurality of ohmic contact stripes161 including projections 163 and a plurality of ohmic contact islands165 are sequentially formed thereon. A plurality of data lines 171including source electrodes 173 and end portions 179, and a plurality ofdrain electrodes 175 are formed on the ohmic contacts 161 and 165. Apassivation layer 180 is formed thereon. A plurality of contact holes182 and a plurality of openings 187 are formed in the passivation layer180. A plurality of pixel electrodes 190 and a plurality of contactassistants 82 are formed in the openings 187 and the contact holes 182,respectively.

Unlike the TFT array panel shown in FIGS. 1, 2A, and 2B, each pixelelectrode 190 has a cutout 191 and the passivation layer 180 includesportions disposed in the cutout 191.

In addition, the TFT array panel according to this embodiment furtherincludes a plurality of storage electrode lines 131 disposed on the samelayer as the gate lines 121. The storage electrode lines 131 extendsubstantially parallel to the gate lines 121 and are supplied with apredetermined voltage such as a common voltage, which is applied to acommon electrode (not shown) on a common electrode panel (not shown).Each storage electrode line 131 includes a plurality of expansions 137which extend laterally across the surface of the substrate 110(projecting upward and downward, as shown in the perspective illustratedin FIG. 19) and overlapping the pixel electrodes 190.

A plurality of storage conductors 178 are formed on the gate insulatinglayer 140. The storage conductors 178 contact the pixel electrodes 190and overlap the expansions 137 of the storage electrodes lines 131 suchthat the storage conductors 178 cover the full width of the expansions137. A plurality of semiconductor islands 157 and a plurality of ohmiccontact islands 167 are sequentially formed under the storage conductors178 and have substantially the same planar shape as the storageconductors 178.

The storage electrode lines 131 and the storage conductors 178 connectedto the pixel electrodes 190 form storage capacitors for enhancing thecharge storing capacity of liquid crystal capacitors formed by the pixelelectrodes 190 and the common electrode.

Furthermore, each gate line 121 includes an end portion 129 having alarge area for contact with another layer or an external drivingcircuit. The passivation layer 180 and the gate insulating layer 140have a plurality of contact holes 181 exposing the end portions 129 ofthe gate lines 121, and a plurality of contact assistants 81 are formedin the contact holes 181.

A method of manufacturing the TFT array panel shown in FIGS. 19 and 20is similar to that shown in FIGS. 1-11B. However, the method isdifferent in that the storage electrode lines 131 are formed along withthe gate lines 121. In addition, the storage conductors 178, thesemiconductor islands 157, and the ohmic contact islands 167 are formedalong with the data lines 171, the drain electrodes 175, thesemiconductors stripes 151, and the ohmic contacts 161 and 165. Thecontact holes 181 on the end portions 129 of the gate lines 121 areformed along with the contact holes 182 and the openings 187, and thecontact assistants 81 are formed along with the pixel electrodes 190 andthe contact assistants 82.

Many of the above-described features of the TFT array panel and themanufacturing method thereof shown in FIGS. 1-11B may also apply to theTFT array panel shown in FIGS. 19 and 20 and the manufacturing methodthereof.

As described above, the pixel electrodes and the contact holesconnecting the drain electrodes and the pixel electrodes are formedusing a single lithography step. Accordingly, a separate lithographystep for forming the pixel electrodes may be omitted to simplify themanufacturing process, thereby reducing the manufacturing time and thecost.

The present invention can be employed to any display devices, including,e.g., LCD and OLED displays. Each pixel of the OLED display includes atleast two thin film transistors including a first thin film transistorconnected to gate lines and data lines and a second thin film transistorconnected to pixel electrodes. Each pixel also includes an organic lightemitting layer disposed between the pixel electrode and commonelectrode.

Although preferred embodiments of the present invention have beendescribed in detail hereinabove, it should be clearly understood thatmany variations and/or modifications of the basic inventive conceptsherein taught which may appear to those skilled in the present art willstill fall within the spirit and scope of the present invention, asdefined in the appended claims.

1. A method of manufacturing a thin film transistor array panel, the method comprising: forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a semiconductor layer on the gate insulating layer; forming an ohmic contact on the semiconductor layer; forming a data line and a drain electrode on the ohmic contact; depositing a passivation layer on the data line and the drain electrode; forming a first photoresist layer on the passivation layer; etching the passivation layer and the gate insulating layer using the first photoresist layer as a mask to expose a portion of the drain electrode and a portion of the substrate; depositing a conductive film; and removing the first photoresist layer to form a pixel electrode on the portion of the drain electrode exposed by the etching of the passivation layer.
 2. The method of claim 1, wherein: the conductive film comprises a first portion disposed on the first photoresist layer and a remaining second portion; and the removal of the first photoresist layer removes the first portion of the conductive film by lift off.
 3. The method of claim 1, wherein the pixel electrode directly contacts the substrate.
 4. The method of claim 1, wherein the exposed portion of the substrate encloses the exposed portion of the drain electrode.
 5. The method of claim 4, wherein the exposed portion of the drain electrode and the exposed portion of the substrate occupy an area defined by the gate line and the data line.
 6. The method of claim 1, wherein the etching of the passivation layer exposes a portion of the data line, and further comprising: forming a contact assistant on the exposed portion of the data line.
 7. The method of claim 6, wherein the formation of the contact assistant is performed simultaneously with the formation of the pixel electrode.
 8. The method of claim 1, wherein the formation of the gate insulating layer, the formation of the semiconductor layer, the formation of the ohmic contact, and the formation of the data lines and the drain electrodes comprises: sequentially depositing a gate insulating layer, an intrinsic amorphous silicon layer, an extrinsic amorphous silicon layer, and a data conductor layer; forming a second photoresist layer on the data conductor layer; sequentially etching the data conductor layer, the extrinsic amorphous silicon layer, and the intrinsic silicon layer using the second photoresist layer as a mask to form a data conductor, an extrinsic semiconductor layer, and an intrinsic semiconductor layer; transforming the second photoresist layer into a third photoresist layer; and etching the data conductor and the extrinsic semiconductor layer to form the data line and the drain electrode and ohmic contacts.
 9. The method of claim 8, wherein the second photoresist layer is formed by using a photo mask including a light blocking area, a translucent area, and a light transmitting area.
 10. The method of claim 9, wherein the transformation of the second photoresist layer into the third photoresist layer comprises ashing.
 11. The method of claim 1, wherein the formation of the gate insulating layer, the formation of the semiconductor layer, the formation of the ohmic contact, the formation of the data lines, and the formation of the drain electrodes is performed using single lithography step.
 12. The method of claim 1, wherein the data line and the drain electrode comprise Mo or Cr.
 13. The method of claim 1, wherein the pixel electrode comprises amorphous ITO or IZO.
 14. A method of manufacturing a thin film transistor array panel, the method comprising: forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a semiconductor layer on the gate insulating layer; forming an ohmic contact on the semiconductor layer; forming a data line and a drain electrode on the ohmic contact; depositing a passivation layer on the data line and the drain electrode; forming a first photoresist layer; etching the passivation layer and the gate insulating layer using the first photoresist layer as a mask to expose a portion of the substrate; transforming the first photoresist layer into a second photoresist layer; etching the passivation layer using the second photoresist layer as a mask to expose a portion of the drain electrode; depositing a conductive film; and removing the second photoresist layer to form a pixel electrode on the portion of the drain electrode exposed by the etching of the passivation layer.
 15. The method of claim 14, wherein the first photoresist layer is formed by using a photo mask including a light blocking area, a translucent area, and a light transmitting area.
 16. The method of claim 14, wherein the transformation of the first photoresist layer into the second photoresist layer comprises ashing.
 17. The method of claim 13, wherein the semiconductor layer, the ohmic contact, the data line, and the drain electrode are formed using a single lithography step.
 18. The method of claim 14, wherein: the conductive film includes a first portion disposed on the second photoresist layer and a remaining second portion; and the removal of the second photoresist layer removes the first portion of the conductive film by lift off.
 19. The method of claim 14, wherein the pixel electrode directly contacts the substrate and the gate insulating layer.
 20. The method of claim 19, wherein: the etching of the passivation layer using the second photoresist layer as a mask exposes a portion of the gate insulating layer; and an area defined by the gate line and the data line is substantially occupied by the exposed portion of the substrate except for the exposed portion of the drain electrode and the exposed portion of the gate insulating layer.
 21. The method of claim 14, wherein: the etching of the passivation layer using the second photoresist layer exposes a portion of the data line; and the removal of the second photoresist layer comprises forming a contact assistant on the exposed portion of the data line.
 22. The method of claim 14, wherein the formation of the gate insulating layer, the formation of the semiconductor layer, the formation of the ohmic contact, and the formation of the data lines and the drain electrodes comprises: sequentially depositing a gate insulating layer, an intrinsic amorphous silicon layer, an extrinsic amorphous silicon layer, and a data conductor layer; forming a third photoresist layer on the data conductor layer; sequentially etching the data conductor layer, the extrinsic amorphous silicon layer, and the intrinsic silicon layer using the third photoresist layer as a mask to form a data conductor, an extrinsic semiconductor layer, and an intrinsic semiconductor layer; partially removing the third photoresist layer to form a fourth photoresist layer; and etching the data conductor and the extrinsic semiconductor layer to form the data line, the drain electrode, and ohmic contacts.
 23. The method of claim 22, wherein the third photoresist layer is formed by using a photo mask including a light blocking area, a translucent area, and a light transmitting area.
 24. The method of claim 22, wherein the partial removal of the third photoresist layer to form the fourth photoresist layer comprises ashing.
 25. A thin film transistor array panel comprising: a gate line formed on a substrate; a gate insulating layer formed on the gate line; a semiconductor layer formed on the gate insulating layer; a data line and a drain electrode formed on the semiconductor layer, the drain electrode including first and second portions; a passivation layer formed on the data line and the first portion of the drain electrode; and a pixel electrode formed on the substrate and the second portion of the drain electrode, said pixel electrode having edges substantially coinciding with edges of the passivation layer.
 26. The thin film transistor array panel of claim 25, wherein: the passivation layer has a contact hole exposing a portion of the data line; and the thin film transistor array panel further comprises a contact assistant formed in the contact hole and having edges substantially coinciding with edges of the contact hole.
 27. The thin film transistor array panel of claim 25, wherein the gate insulating layer has edges substantially coinciding with edges of the passivation layer except for a portion under the drain electrode.
 28. The thin film transistor array panel of claim 25, wherein: the gate insulating layer has edges substantially coinciding with edges of the passivation layer except for a portion around the drain electrode; and the portion around the drain electrode is exposed.
 29. The thin film transistor array panel of claim 28, wherein the exposed portion of the gate insulating layer is covered with the pixel electrode.
 30. The thin film transistor array panel of claim 25, wherein the semiconductor layer has substantially the same planar shape as the data line and the drain electrode except for a portion disposed between the data line and the drain electrode.
 31. The thin film transistor array panel of claim 25, wherein the pixel electrode includes a cutout.
 32. The thin film transistor array panel of claim 31, further comprising a storage electrode comprised of the same layer as the gate line and overlapping the pixel electrode.
 33. The thin film transistor array panel of claim 32, further comprising a storage conductor formed on the gate insulating layer, connected to the pixel electrode, and overlapping the storage electrode. 